A Diwali gift for a brighter future in microelectronics
Microelectronics · IIT Jodhpur

Engineering
the invisible.

Exploring the devices and circuits that make tomorrow’s technology more capable, efficient, and beautifully small.

PhD researcherSemiconductor devicesJodhpur, India
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Ideas at the scale of atoms

“Great technology often begins with a smaller question.”

A researcher's lens
From device physics to circuit behaviour, Ankush’s work explores how careful engineering at the transistor level can shape better electronic systems.
01 / Research directions

Curiosity, in layers.

A connected view of emerging devices, compact circuit design, and the trade-offs that define low-power electronics.

01 — DEVICE PHYSICS

Emerging transistor architectures

Ferroelectric MOSFETs, negative-capacitance devices, and the pursuit of favourable switching behaviour.

02 — LOW-POWER DESIGN

Energy-aware VLSI systems

Examining power, delay, and operating conditions in memory and logic circuits for efficient design.

03 — MODELLING & ANALYSIS

Device-to-circuit insight

Using simulation, benchmarking, and noise analysis to connect device choices with practical performance.

02 / Selected work

Ideas, made tangible.

A selection of conference contributions, technical reviews, and design projects across semiconductor devices and VLSI.

2025

Ferroelectric stacking in FET structures

Explored approaches to ferroelectric stacking, device behaviour, and benchmarking at the 20 nm technology node. Research paper accepted for presentation at VLSI SATA 2025.

Conference paper
2024

Ferroelectric MOSFET design and comparison

Designed a FeMOSFET using Synopsys EDA tools and compared modelling approaches in Synopsys and Silvaco; work accepted as a book chapter for ICICS.

Device design
2024

Negative capacitance in NC-TFETs

Reviewed negative-capacitance approaches for low-power TFET applications, including strengths, limitations, and critical device parameters.

Research review
↗
Device modelling / Jan — Mar 2025

Noise analysis of vertical & U-shaped NC-TFETs

Design, flicker and shot-noise analysis, and benchmarking for low-power device structures.

↗
Circuit design / Aug — Oct 2024

6T SRAM cell for power optimisation

Designed and analysed a 45 nm memory cell across operating voltages and frequencies using Cadence Virtuoso.

03 / The journey

Built on foundations.

A path through engineering, device modelling, and the questions that lead to deeper research.

CURRENT

PhD research in Microelectronics

Indian Institute of Technology Jodhpur

As shared in this portfolio brief
2023 — 2025

M.Tech, VLSI Design

Lovely Professional University, Punjab · CGPA 8.60

2019 — 2023

Bachelor of Education, Science

National Institute of Technology Puducherry · CGPA 7.25

2024 — 2025

Research presented & accepted

ICICS · Engineering Research Express · VLSI SATA

Portrait of Ankush MondalAnkush Mondal · Microelectronics researcher
04 / About Ankush

Research with
purpose.

Ankush Mondal is a microelectronics researcher at IIT Jodhpur, interested in the fundamental devices and thoughtful circuit design that can move electronics toward lower power and greater capability. His work spans transistor modelling, VLSI design, simulation, and technical communication.

Synopsys EDASilvaco / InspectCadence VirtuosoVerilog HDLPythonDevice modelling
Discuss research or collaboration ↗
05 / Get in touch

Good ideas
begin with hello.

For research conversations, collaboration, academic opportunities, or simply to connect, send a note directly to Ankush on WhatsApp.

+91 8900 927 463
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